Structural properties of Pb(Mg1/3Nb2/3)0.90Ti0.10O3 films deposited by pulsed laser
ablation on titanium nitride substrates
A. Fundoraac, E. Martínezb, O. Blancob, and J.M. Siqueirosa
a Centro de Ciencias de la Materia Condensada, UNAM, Ensenada, B. Cfa., México.
b Centro de Investigación en Materiales, DIP–CUCEI, Universidad de Guadalajara, Apartado Postal 2–638, 44281, Guadalajara, Jalisco, México.
c Facultad de Física–IMRE, Universidad de La Habana, La Habana, CUBA.
]]>Recibido el 19 de septiembre de 2007
Aceptado el 29 de noviembre de 2007
Abstract
Pulsed laser ablation is used to deposit Pb(Mg1/3Nb2/3)0.90Ti0.10O3 (PMNT) polycrystalline thin films on TiN bottom electrodes, which in turn are prepared by DC sputtering on Si wafers. The PMNT perovskite phase formation is confirmed by x–ray diffraction analysis. The morphology of the films is analyzed by scanning electron microscopy. The nature of the ferroelectric layer–electrode interface is studied by transmission electron microscopy. The effect of the characteristics of the interface in the performance of the multilayer system is also studied. The characteristics of the TiN films, used as electrodes, are evaluated using Auger electron spectroscopy and x–ray photoelectron spectroscopy. Finally, a model for the PMNT/TiN/SiO2/Si film system thus obtained is proposed.
Keywords: Ferroelectric thin films; PMNT; pulsed laser ablation; titanium nitride.
Resumen
Se depositan películas policristalinas de Pb(Mg1/3Nb2/3)0.90Ti0.10O3 (PMNT) por la técnica de ablación por láser pulsado sobre electrodos de TiN que, a su vez, son crecidas por erosión iónica en DC sobre sustratos de Si. La formación de la fase perovskita del PMNT es confirmada por análisis de difracción de rayos X. La morfología de las películas es analizada por microscopía electrónica de barrido. La naturaleza de la interfaz entre la capa ferroeléctrica y el electrodo es estudiada por microscopía electrónica de transmisión. Así mismo, se estudian los efectos de las propiedades de dicha interfaz en el desempeño del sistema de multicapas. Las características de las películas de TiN, usadas como electrodos, son evaluadas mediante espectroscopía de electrones Auger y espectroscopia de fotoelectrones de rayos X. Finalmente, se propone un modelo para el sistema PMNT/TiN/SiO2/Si de películas delgadas aquí descrito.
]]> Descriptores: Películas delgadas ferroeléctricas; PMNT; ablación por láser pulsado; nitruro de titanio.
PACS: 77.84.–s; 68.65.Ac; 81.15.Fg
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Acknowledgments
The technical support by I. Gradilla, E. Aparicio, and F. Ruiz is acknowledged. This work has been partially supported by CoNaCyT–Mexico, through grant No. 47714–F and by DGAPA–UNAM grant No. IN102908.
References
]]>1. X.Y. Zhao, B.J. Fang, H. Cao, Y.P. Guo, and H.S. Luo, Mater. Sci. Eng. B 96 (2002) 254. [ Links ]
2. Z.G. Ye, M. Dong, and Y. Yamashita, J. Cryst. Growth 211 (2000) 247. [ Links ]
3. J.H. Park, J. Park, J.G. Park, B.K. Kim, and Y Kim, J. Eur. Ceram. Soc. 21 (2001) 1383. [ Links ]
4. F.F. Lorraine and D.A. Payne, Mat. Res. Soc. Symp. Procc. 200 (1990) 173. [ Links ]
5. S.L. Schwartz, T.R. Shrout, W.A. Schultz, and L.E. Cross, J. Am. Cer. Soc. 67 (1984) 311. [ Links ]
6. R.E. Cohen, Nature, News and Views, Material Science 441 (2006) 941. [ Links ]
7. Z. Kutnjak, J. Petzelt, and R. Blinc, Nature, Letters 441 (2006) 956. [ Links ]
8. N. J. Donnelly, G. Catalan, C. Morros, R.M. Bowman, and J.M. Gregg, J. Appl. Phys. 93 (2003) 9924. [ Links ]
9. J.P. Maria, W. Hackenberger, and S. Trolier–McKinstry, Mat. Res. Soc. Symp. Procc. 493 (1998) 421. [ Links ]
10. V. Nagarajan et al., Mat. Res. Soc. Symp. Procc. 596 (2000) 505. [ Links ]
11. N.J. Donnelly, G. Catalan, C. Morros, R.M. Bowman, and J.M. Gregg, Mat. Res. Soc. Symp. Procc. 688 (2002) 337. [ Links ]
12. N.J. Donnelly, G. Catalan, C. Morros, R.M. Bowman, and J.M. Gregg, Mat. Res. Soc. Symp. Procc. 748 (2003) 367. [ Links ]
13. J.H. Park, F. Xu, and S. Trolier–Mckinstry, J. Appl. Phys 89 (2001) 568. [ Links ]
14. Z. Zhang, J.H. Park, and S. Trolier–McKinstry, Mat. Res. Soc. Symp. Procc. 596 (2000) 73. [ Links ]
15. A.Y. Liu et al., App. Phys. Lett. 87 (2005) 72903. [ Links ]
16. S. Jaydeep, S. Yadav, B.P Malla, and A.R. Kulkarnj, Appl. Phys. Lett. 81 (2002) 3840. [ Links ]
17. J.P. Maria, W. Hackenberger, and S. Trolier–McKinstry, J. Appl. Phys. 84 (1998) 5147. [ Links ]
18. T.H. Teng et al., Mat. Res. Soc. Symp. Procc. 596 (2000) 37. [ Links ]
19. C.A. Randall and A.S. Bhalla, J. Matter. Sci. 29 (1990) 5. [ Links ]
20. J. Chen, H.M. Chan, and M.P Harmer, J. Am. Ceram. Soc. 72 (1989) 593. [ Links ]
21. P.Y. Jouan, M.C. Peignon, Ch. Cardinaud, and G. Lemperiere, Appl. Surf. Sci. 68 (1993) 559. [ Links ]
22. M.H. Yeh, K.S. Liu, and I.N. Lin, J. Mater. Res. 9 (1994) 2379. [ Links ]
23. J. Chen, Q. Zhang, and L.E. Cross, Mater. Res. Soc. Symp. Proc. 310 (1993) 47. [ Links ]
24. N. Wakiya, A. Saiki, N. Ishizawa, and N. Mizutane, Mater. Res. Bull. 28 (1993) 137. [ Links ]
25. J. Chen and M.P. Harmer, J. Am. Ceram. Soc. 73 (1990) 68. [ Links ]
26. M. Kazemeini, A. Berezin, and N. Fukuhara, Thin Solid Films 372 (2000) 70. [ Links ]
27. K. Okuwada, M. Iami, and K. Kakumo, Jpn. J. Appl. Phys. 28 (1989) L1271. [ Links ]
28. Landolt–Bornstein 1981 in Numerical Data and Functional Relationships in Science and Technology, New Series, Ferroelectric and Related Substances, Subcolume a: Oxides (Springer–Verlag, Heidelberg, New York). [ Links ]
29. A. Fundora and J.M. Siqueiros, Thin Solid Films 373 (2000) 60. [ Links ]
30. W.L. Warren, D. Dimos, and R.M. Waser, Mater. Res. Bull. 31 (1996) 40. [ Links ] ]]>