Rev. mex. fis.- PDF Download - Art. IDS0035-001X2011000200006

Revista mexicana de física
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ROSALES-QUINTERO, P. et al. Impact of the base doping concentration on the transport mechanisms in n-type a-SiGe:H/p-type c-Silicon Heterojunctions. Rev. mex. fis. [online]. 2011, vol.57, n.2, pp.133-139. ISSN 0035-001X.

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