Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication

 

Chao-Nan Chen^a, Jung-Jie Huang^b*

 

^a Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan.

^b Department of Industrial Engineering and Managemet, DaYeh University, Changhua, Taiwan. *Corresponding author. E-mail address: jjhuang@mail.dyu.edu.tw

 

Abstract

A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm²/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future.

Keywords: Solution process; Indium-zinc-oxide; Thin-film transistor; Excimer laser annealing.

 

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Acknowledgments

The authors would like to thank the Asia University for financially supporting this research under contract No. 102-asia-37.

 

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