Enhanced RF Characteristics of a 0.5 pm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology

 

H. J. Saavedra-Gómez¹, J. R. Loo-Yau¹, Juan Luis del Valle-Padilla¹, P. Moreno¹ , F. Sandoval-lbarra*¹ and J.A. Reynoso-Hernández²

 

¹ Centro de Investigación y de Estudios Avanzados del l. P. N. Unidad Guadalajara, Av. del Bosque 1145, Colonia El Bajío, C. P. 45037, Zapopan Jalisco, México.

² Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana 3918, Zona Playitas, C. P. 22860, Ensenada, B. C., México. sandoval@cts_desing.com

 

ABSTRACT

In this work a technique to heighten the breakdown voltage and the transition frequency (f_T) in standard MOS technology is presented. By using an optimized extended drift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the operation frequency, the standard analog/digital pads were modified to decrease coupling effects with the substrate. These two enhancements make the proposed MOSFET structure suitable for mid-power RF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdown voltage of 20 V, IP3 of +30.2 dBm and an improvement of 31.9% and 34.7% of the extrinsic f_T and f_max, respectively.

Keywords: MOSFET, HVMOS, High Breakdown.

 

RESUMEN

Se presenta una técnica para incrementar el voltaje de ruptura y la frecuencia de transición en dispositivos MOSFET fabricados en una tecnología CMOS estándar (0.5 μm, 5V). Colocando una región de arrastre extendida sobre el drenador, el MOSFET puede alcanzar un mayor voltaje de ruptura. Para mejorar la frecuencia de operación, se modificaron los pads analógico/digital para minimizar el acoplamiento que puede existir hacia el substrato. Ambas mejoras hacen que la estructura propuesta del MOSFET sea adecuada para aplicaciones RF de potencia media. Los resultados experimentales muestran un voltaje de ruptura de 20 V, una IP3 de +30.2 dBm y una mejora del 31.9% y 34.7% en las frecuencias f_T y f_max, respectivamente.

 

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