Improving the electrical properties of non–intentionally doped n–GaN by deuteration

 

J. Mimila–Arroyo^a)1, E. Morales¹, A. Lusson², J. M. Laroche², F. Jomard² and M. Tessier²

 

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional Av. Instituto Politécnico Nacional No 2508, México D.F., CP 07360, México. ^a) jmimila@cinvestav.mx

Groupe d'Etude de la Matière Condensée (GEMaC), CNRS Université de Versailles Saint Quintin–en–Yvelines 1 place A. Briand, 92195 Meudon Cedex, France.

 

Recibido: 30 de septiembre de 2010.
Aceptado: 6 de diciembre de 2010.

 

Abstract

Here we report on the study of the effects on the charge transport properties of deuterium in–diffusion in non–intentionally doped n–GaN using a two steps process: a low temperature deuterium diffusion and then a thermal anneal at temperatures as high as 800 °C, for driving the deuterium deeper into the material. The obtained results show that deuteration by this two steps process produces a decrease on the electron concentration of at least one order of magnitude and an increase of the same order on electron mobility. Such improvements are attributed, respectively, to the capture of free electrons by free deuterium acceptor and to the deuterium passivation of deep acceptor levels located at the dislocations core, decreasing their dispersive and recombination capability. The observed improvement remains stable at temperatures close to 800 °C. This deep acceptor level passivation should positively impact the performance of electronic devices made with non–intentionally doped n–GaN layers.

Keywords: Deuteration; Gallium nitride; Passivation.

 

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