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Superficies y vacío
versão impressa ISSN 1665-3521
Superf. vacío vol.23 no.1 Ciudad de México Mar. 2010
Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
J. DíazReyes*1, M. GalvánArellano2 and R. PeñaSierra2
1 CIBAIPN, ExHacienda de San Juan Molino Km. 1.5, Tepetitla, Tlaxcala. 90700. México. *email: jdiazr2001@yahoo.com.
2 CINVESTAVIPN, Depto. de Ing. Eléctrica, SEES Apdo. Postal 14740, México, D. F. 07000. México.
Recibido: 20 de octubre de 2009.
Aceptado: 20 de enero de 2010.
Abstract
It presents the structural and electrical characterization of rectangular and triangular barriers based on AlxGa1xAs/GaAs heterostructures grown in a metallicarsenicbasedMOCVD system. The gallium and aluminum precursors were the organmetallic compounds trimethylgallium and trimethylaluminum, respectively. The barriers were grown with different aluminum concentrations for varying the AlGaAs bandgap and as consequence the potential barrier height. To obtain the triangular barriers increased the Al concentration gradually each minute up to reach 40% molar fraction. Raman spectroscopy was used to the structural characterization of the barriers. Potential barrier height and carrier transport mechanism through them is obtained by the currentvoltage measurements. Raman spectra of the rectangular barrier present the TO GaAslike, LO GaAslike and LO AlAslike as main vibrational modes. As the growth temperature is increased the layers compensation decreases but the Raman spectra show that the layers become more defective. The triangular barriers Raman spectra presented the same vibrational modes. As the Al concentration is increased the Triangular barriers phononic bands shifted slightly to lower wavenumbers and are broader compared with the phononic bands of the rectangular barriers.
Keywords: Semiconductors IIIV; GaAs; Barrier height; Raman spectroscopy; MOCVD.
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