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Revista mexicana de física

versión impresa ISSN 0035-001X

Rev. mex. fis. vol.64 no.3 México may./jun. 2018

 

Research

Research in Condensed Matter

Synthesis, structural characterization and differential thermal analysis of the quaternary compound Ag2MnSnS4

G.E. Delgadoa  * 

N. Sierraltab 

M. Quinteroc 

E. Quinteroc 

E. Morenoc 

J.A. Flores-Cruzd 

C. Rincónc 

a Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida, 5101, Venezuela.

b Grupo de Teoría de la Materia Condensada, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela.

c Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela.

d Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada-Instituto Politécnico Nacional, Ciudad de México, 11500, México.


Abstract

The quaternary chalcogenide compound Ag2MnSnS4 belonging to the system I2-II-IV-VI4 and synthesized by the melt and anneal technique, was characterized by Rietveld refinement of the powder X-ray diffraction data and differential thermal analysis (DTA). It was found that Ag2MnSnS4 crystallizes in the orthorhombic space group Pmn21, with unit cell parameters a=8.17055 Å, b=6.94135 Å, c=6.65325 Å, and V=377.335 Å3, in a wurtzite-stannite structure. The DTA indicates that this compound melts at 790°C and that the phase relations which occurs in the material would be: αα+α1α1α1+βββ1+LL, were α is the orthorhombic wurtzite-stannite Pmn21 structure; α1 is a high temperature modification; and β and β1 are the zinc-blende structure and its high-temperature modification, respectively.

Keywords: Chalcogenide; semiconductor; chemical synthesis; X-ray powder diffraction; crystal structure; differential thermal analysis

PACS: 61.05.cp; 61.50.Nw; 61.66.Fn; 61.40.b

1. Introduction

The family of quaternary I2-II-IV-VI4 compounds, where I = Cu or Ag; II=Zn, Cd, Mn, Fe, or Ni; IV=Si, Ge, or Sn; and VI = S, Se, or Te; obtained from the tetrahedrally coordinated derivatives of the II-VI binaries1, have received considerable attention lately mainly because they can be useful for their potential application as solar-cell absorbers2-4, photocatalysts for solar water splitting5 and thermoelectric materials6-8. In particular, chalcogenide tin-sulphide complex compounds are very promising for optoelectronics, which is a consequence of high electron-phonon anharmonicity for such kind of materials9. One of these materials, Cu2ZnSnS4 has attracted great attention for photovoltaic devices because of its optimum direct band gap energy (∼1.5 eV), large absorption coefficient (∼104−6 cm−1, naturally abundant and environmentally friendly thin-film solar cell absorber10,11. These quaternaries fulfill the rules of adamantane compound formation, according to which the cation substitution is performed in such a way that the average number of valence electrons per atomic site and the ratio valence electrons to anions, which in diamond-like materials are four and eight, respectively, is preserved1.

Structural studies carried out on some members of this family indicate that they crystallize in sphalerite or wurtzite derivative structures. In sphalerite derivatives with tetragonal symmetry: in a Cu2FeSnS4-type structure (stannite, space space group I4¯2m) or in a Cu2ZnSnS4-type structure (kesterite, space group I4¯)12. In wurtzite derivatives with orthorhombic symmetry: in a Cu2CdGeS4-type structure (wurtzite-stannite, space group Pmn21)13 or with monoclinic symmetry (wurtzite-kesterite, space group Pn)14. These crystallographic forms are very close to each other with the only difference in the distribution of the cations in the tetrahedral sites (see Fig. 1). Recently, Chen et al.15,16 have shown that there is a clear relationship between the properties of the wurtzite-kesterite and kesterite structures, as well as between wurtzite-stannite and stannite structures.

Figure 1 Unit cell diagram of the stannite, kesterite, wurtzite-stannite and wurtzite-kesterite structures showing the cation and anion distribution in the I2-II-IV-VI4 family of compounds. 

Several recent studies on the structural characterization and physical properties, including transport properties, of these Cu2-II-IV-VI417-28 and Ag2-II-IV-VI429-35 quaternary semiconductor chalcogenides have been reported.

On the other hand, I2-II-IV-VI2 semiconducting compounds in which the II cation is a paramagnetic ion, as Mn+2, Fe+2, Co+2 or Ni+2, known as semimagnetic materials, have also received considerable attention because magneto-optical effects larger than those observed in II 1-x Mn x -V I2 alloys could be obtained in such quaternaries36. One of them, Ag2MnSnS4 could be of interest because it exhibits antiferromagnetic behavior37. Concerning to its crystal structure, discrepancy exists in the scarce information reported the lit-erature. According to Lamarche et al.37, this compound crystallizes with orthorhombic symmetry and unit parameters a=8.019 Å, b=6.964 Å, c=6.527 Å, without defining its space group or structure. However, it has been more recently reported, with no structural details38, that Ag2MnSnS4 crystallizes in the monoclinic space group Pn, with unit cell parameters a=6.6961 Å, b=6.9911 Å, c=8.2222 Å, β=90.00(3) (pseudo-orthorhombic).

Furthermore, Ag2MnSnS4 is one of the three sulfide minerals containing silver and tin found in nature. They are the hocartite, Ag2FeSnS4, found in Bolivia in 196739, the pirquitasite, Ag2ZnSnS4, found in Argentina in 198040, and the agmantinite, Ag2MnSnS4, found in Perú in 201441, whose name has been recently approved by the Commission on New Minerals, Nomenclature and Classification of the International Mineralogical Association41.

In view of the considerable importance of such semimagnetic compound, in this work we report the synthesis, thermal analysis and crystal structure characterization of the I2-II-IV-VI4 Ag2MnSnS4 semimagnetic compound.

2. Experimental

2.1. Synthesis

The sample was synthesized by the melt and anneals technique. Highly pure components (silver 99.98%, manganese 99.97%, tin 99.99%, and sulphur 99.99) of 1 g sample were sealed under vacuum (10-5 Torr) in a small quartz ampoule, and then the components were heated up to 200°C and kept for about 1-2 h. The temperature was then raised to 500°C using a rate of 40°C/h, and held at this temperature for 14 hour. After, the sample was heated from 500°C to 800°C at a rate of 30°C/h and kept at this temperature for another 14 hours. Then it was raised to 1150°C at 60°C/h, and the components were melted together at this temperature. The furnace temperature was brought slowly (4°C/h) down to 600°C, and the sample was annealed at this temperature for 1 month. Finally, the sample was slowly cooled to room temperature using a rate of about 2°C/h.

2.2. Chemical Analysis

The stoichiometric relation of the sample was investigated by SEM technique, using a Hitachi S2500 microscope equipped with a Kedex EDX accessory. Three different regions of the ingot were scanned and the average atomic percentages are as follows: Ag (25.2%), Mn (11.1%), Sn (11.3%) and S (52.4%). The error in standardless analysis was around 5%. These values are in good agreement with the ideal composition 2:1:1:4.

2.3. Differential thermal analysis (DTA)

Phase transition temperatures were obtained in the temperature range between 20 to 1150°C, using a Perkin-Elmer DTA-7 with aluminum and gold used as reference materials. The charge was of powdered alloy of approximately 100 mg weight. Both heating and cooling runs were carried out on each sample. The average rates of these runs being approximately 10°C/min. The error in determining these temperatures is of about ±10°C.

2.4. X-ray powder diffraction (XRPD)

For the X-ray analysis, a small quantity of the sample, cut from the ingot, was ground mechanically in an agate mortar and pestle, and sieved to a grain size of less than 10 µm. The XRPD data was collected at 293(1) K, in θ/θ reflection mode using a Siemens D5005 diffractometer equipped with an X-ray tube (CuKα radiation: λ=1.5418 Å; 40 kV, 30 mA). The specimen was scanned from 10°-80° 2θ, with a step size of 0.02° and counting time of 10 s. Quartz was used as an external standard.

3. Results and Discussion

3.1. Differential thermal analysis

DTA runs were carried out on the sample as indicated above. The transition temperatures as well as the type of melting were obtained from the peaks on the DTA heating and cooling curves. Each transition temperature was determined from the base intercept of the tangent to the leading edge of the peak in the differential signal. The value of the melting point temperature, denoted as TM, obtained from the peaks on the DTA curve, is given in Fig. 2, which shows the thermogram for Ag2MnSnS4.

Figure 2 DTA thermogram for Ag2MnSnS4. The direction of heating run, or cooling run, is indicated by the corresponding arrow 

Three transitions are observed in both heating and cooling runs. These appear at about 477, 640 and 790°C, and at about 973, 700 and 592°C, in these curves, respectively. It can also be seen, that the compound melts congruently at about 973°C. Hence, the effect observed at 973°C corresponds to the transition from (L + β1) to the liquid state L. Here, β1 is a zinc-blende (ZB) structure high-temperature modification. The effect observed at 790°C corresponds to the liquid-line, i.e., to the peritectic decomposition of the Ag2MnSnS4 from β (other ZB phase high temperature modification) to L + β1. On the other hand, the peaks at 640 and 700°C, in the heating curve, are related to the peritectic decomposition of the compound from α1, which is a wurtz-stannite phase high temperature modification, to β+α1, and to the solid-solid transformation from β+α1 to β, respectively. In addition, the peaks at 592 and 640°C correspond to the peritectic decomposition of the Ag2MnSnS4, from α1+α to solid α1, and to the transition from α1 to β+α1, respectively. The transition at about 477°C, observed in heating curve, corresponds to the peritectic decomposition of the room temperature α-Ag2MnSnS4 phase with wurtz-stannite (Pmn21) structure, to α+α1. Finally, the sequence of phase relations for this compound from low to high temperatures should be: αα+α1α1α1+βββ1+LL.

3.2. X-ray powder diffraction analysis

Figure 3 shows the resulting X-ray powder diffractogram for the Ag2MnSnS4 compound. The X-ray powder pattern show a single phase. The 20 first peak positions were indexed using the program Dicvol0442, which gave a unique solution in an orthorhombic cell with parameters a=8.1701 Å, b=6.9401 Å, and c=6.6501 Å. The lack of systematic absence condition h+k+l, in the general reflections of the type hkl, indicated a P-type cell. By analyzing the crystallographic characteristics of Ag2MnSnS4 with those of other I2-II-IV-VI4 related compounds, taking in account the sample composition, cell parameters and lattice-type, it is found that this material is isomorphic with Ag2CdGeS429 which crystalize with wurtzite-stannite structure (space group Pmn21)13. So, in order to refine the structural parameters of Ag2MnSnS4, the space group Pmn21 (N° 31) and the atomic position parameters of Ag2CdGeS4 were taken as the starting values.

Figure 3 Final Rietveld plot showing the observed, calculated and difference pattern for the Ag2MnSnS4 compound. The Bragg reflections for both phases are indicated by vertical bars. 

The Rietveld refinement43 was performed using the Fullprof program44. The indexed unit cell results were taken as starting parameters. The angular dependence of the peak full width at half maximum (FWHM) was described by the Cagliotti’s formula45. The parameterized Thompson-Cox-Hastings pseudo-Voigt profile function46 was used for the simulation of the peak shapes. The background of the XRD data was refined with a polynomial with six coefficients. The thermal motion of the atoms was described by one overall isotropic temperature factor. A total of 23 parameters of the Ag2MnSnS4 compound, including peak shape, scale factor, cell, atomic coordinates, isotropic displacement and full-width at half-maximum (FWHM) parameters, were refined. The final Rietveld refinement led to agreement factors of: Rp = 10.3%, Rwp = 11.8%, Rexp = 9.6%, and S = 1.2, for 4001 step intensities and 145 independent reflections.

The results of the Rietveld refinement are summarized in Table I. Figure 3 shows the observed calculated and difference profile for the final cycle of the refinement. Atomic coordinates, occupancy factors and isotropic temperature factor are given in Table II. Bond distances and angles are given in Table III. Figure 4 shows the unit cell diagram for Ag2MnSnS4.

Table I Results of Rietveld refinement for Ag2MnSnS4

Molecular formula Ag2MnSnS4 Dcalc 4.55 (g/cm3)
Molecular weight 517.7 (g/mol) Nº step intensities 4001
Crystal system Orthorhombic Nº independent reflections 145
Space group Pmn21 (Nº 31) Peak-shape profile Pseudo-Voigt
Z 2
a 8.1705(5) (Å Rexp 9.6 %
b 6.9413(5) Å Rp 10.3 %
c 6.6532(5) Å Rwp 11.8 %
V 377.33(5) S 1.2

Rexp= 100 [(N-P+C)/W(yobs2)]1/2 N-P+C is the number of degrees of freedom, Rp= 100 yobs-ycalc/yobs

Rwp= 100 wyobs-ycalc/yobs]1/2 S=[Rwp/Rexp]

Table II Atomic coordinates, occupancy factors and isotropic temperature factor for Ag2MnSnS4

Atom Ox. Wyck. x y z foc B (Å2)
Ag +1 4b 0.256(2) 0.317(2) 0 1 0.6(1)
Mn +2 2a 0 0.848(2) 0.988(2) 1 0.6(1)
Sn +4 2a 0 0.185(2) 0.491(2) 1 0.6(1)
S1 -2 4b 0.237(2) 0.325(2) 0.387(2) 1 0.6(1)
S2 -2 2a 0 0.186(2) 0.821(2) 1 0.6(1)
S3 -2 2a 0 0.884(2) 0.365(2) 1 0.6(1)

Table III Distance lengths (Å) and bond angles (º) for Ag2MnSnS4

Ag-S1 2.58(1) Mn-S1iii 2.55(2) Sn-S1 2.27(2)
Ag-S1i 2.60(2) Mn-S1vi 2.55(2) Sn-S1vii 2.27(2)
Ag-S2ii 2.57(2) Mn-S2iv 2.60(2) Sn-S2 2.20(2)
Ag-S3i i 2.59(2) Mn-S3v 2.52(2) Sn-S3viii 2.25(2)
S1-Ag-S1i 105.6(4) S1-Ag-S2ii 114.9(3) S1-Ag-S3i 113.8(3)
S2ii -Ag-S1i 102.8(3) S1i -Ag-S3i 113.4(3) S2ii -Ag-S3i 105.9(3)
S1iii -Mn-S1vi 114.7(5) S1iii -Mn-S2iv 108.2(3) S2iv -Mn-S1vi 108.2(3)
S3v -Mn-S1iii 108.0(3) S3v -Mn-S1vi 108.0(3) S3v -Mn-S2iv 109.7(7)
S2-Sn-S1 107.6(3) S2-Sn-S3viii 112.0(8) S1-Sn-S3viii 106.5(4)
S1vii -Sn-S2 107.6(3) S1vii -Sn-S1 116.7(6) S1vii -Sn-S3viii 106.5(4)

Symmetry codes: (i) 0:5 - x, 1 - y, -0:5 + z; (ii) x, y, -1 + z; (iii) -0:5 + x, 1 - y, 0:5 + z; (iv) x, 1 + y, z; (v) x, y, 1 + z; (vi) 0:5 - x, 1 - y, 0:5 + z; (vii) -x, y, z; (viii) x, -1 + y, z.

Figure 4 Unit cell diagram of Ag2MnSnS4 viewed in the ba plane of the space group Pmn21

Ag2MnSnS4 crystallize with orthorhombic symmetry, space group Pmn21, and unit cell parameters: a=8.17055Å, b=6.94135 Å, c=6.65325 Å , and V=377.335 Å3 in a wurtzite-stannite structure. This structure can be described as a hexagonal, closest-packed array of sulfur anions with Ag+, Mn+2 and Sn4+ occupying tetrahedral holes, and is characterized by a three-dimensional arrangement of slightly distorted AgS4, MnS4 and SnS4 tetrahedra connected by corners. All S atoms are surrounded by two Ag atoms and by one Mn and one Sn atom, and each cation is coordinated by 4 anions. This array is expected for adamantane compounds1.

The tetrahedrons containing the Sn atoms [mean S S distance 3.67(2) Å] are slightly smaller than those containing the Mn atoms [means S S distance 4.16(2) Å] and Ag atoms [mean SS distance 4.22(2) Å] respectively. The interatomic distances are shorter than the sum of the respective ionic radii (rAg+ = 1.14, rMn2+ = 0.80, rSn4+ = 0.69, rS2- = 1.70 Å) for structures tetrahedrally bonded47.

The mean bond distance values for Ag-S, Mn-S and Sn-S, given in Table III, agree well with the distances observed in other adamantane compounds as Ag2CdSnS49, Ag2CdGeS429, Ag2CdSnS430, Ag2ZnSiS432, AgCd2GaS448, Ag2ZnGeS449, MnIn2S450, AgInS2 and AgIn5S851.

In addition, the Debye temperature θD, which is an important parameter in the understanding of thermal and electrical properties of semiconducting materials, can be estimated for this compound by using the Lindemann’s expression θDC(TM/W¯)1/2(1/ae) 52. Here, W¯=W/n, W is the molecular weight, n is the number of atoms per molecule (n = 8 for Ag2MnSnS4), C is a constant (C300 for I2-II-IV-VI4 tetrahedral bonded quaternary compounds 24), and ae is the effective lattice parameter ae=(V/Z)1/3, where V is the volume of unit cell (in Å3) and Z the number of molecules per cell (Z = 2). For Ag2MnSnS4, from the calculated value ae=5.7354 Å, we obtain θD212 K. This value is in good agreement with those reported for the related Cu2Mn-IV-VI2 semimagnetic semiconductor compounds, which vary from 185 to 310 K24.

Conclusions

The quaternary chalcogenide compound Ag2MnSnS4 crystallizes in the wurtzite-stannite structure, space group Pmn21, characterized by a three-dimensional arrangement of slightly distorted AgS4, MnS4 and SnS4 tetrahedras connected by corners. The DTA indicates that this compound melts at 790ºC.

Acknowledgments

This work was supported by CDCHT-ULA FONACIT (Grant LAB-97000821).

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Received: August 18, 2017; Accepted: February 06, 2018

* e-mail: gerzon@ula.ve

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