Investigación

 

Raman scattering from Ge_1-xSn_x (x ≤ 0.14) alloys

 

H. Navarro-Contreras^a, A.G. Rodríguez^a, M.A. Vidal^a and H. Pérez-Ladrón de Guevara^b

 

^a Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luis Potosí, Álvaro Obregón 64, San Luis Potosí, S.L.P. 78000, México.

^b Centro Universitario de los Lagos, Universidad de Guadalajara, Av. Enrique Díaz de León 1144, Col. Paseos de la Montaña, Lagos de Moreno, Jal. 47460, México.

 

Received 5 November 2014;
accepted 18 August 2015

 

Abstract

Ge_1-xSn_x alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 % by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 % as revealed by X-ray diffraction and Raman spectroscopy.

Keywords: Raman; space correlation model.

PACS: 68; 68.35.bg

 

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Acknowledgments

The authors acknowledge the financial support from Consejo Nacional de Ciencia y Tecnología (CONACyT) Mexico, through grants CB-2009-01 133428, 152155 and 78943; from FRC-UASLP, and the access to the Laboratorio Nacional de Analisis Físicos, Químicos y Biologicos-UASLP, during the course of this research.

 

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