Investigación

 

Hall effect: the role of nonequilibrium charge carriers

 

S. Molina Valdovinos and Yu. G. Gurevich

 

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Departamento de Física, Av. IPN 2508, México, D.F., 07360, México, e–mail: smolina@fis.cinvestav.mx

 

Recibido el 11 de abril de 2011
Aceptado el 13 de junio de 2011

 

Abstract

A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley–Read model), the expressions for the electrochemical potential of elec–trons and holes, Hall field and Hall constant R_H are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.

Keywords: Galvanomagnetic phenomena; bipolar semiconductors; recombination; Hall effect.

 

Resumen

Presentamos un nuevo modelo del efecto Hall en el caso de semiconductores bipolares. Se toma en cuenta portadores fuera de equilibrio, procesos de generación y recombinación asistidos por trampas (modelo de Shockley–Read). Se obtienen expresiónes para los potenciales electroquímicos de electrones y huecos, campo de Hall y constante de Hall R_H. Estudiamos la dependencia de estás expresiónes de la distribución de portadores a lo largo de la dirección del campo Hall, en el caso de semiconductores intrínsecos y extrínsecos.

Descriptores: Fenómenos galvanomagneticos; semiconductores bipolares; recombinación; efecto Hall.

 

PACS: 72.15.Gd; 72.20.My; 72.20.–i

 

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References

1. It is practice in the literature to write H in a Lorentz force . For those cases where H = B, it would be necessary to replace in the Lorentz force and in the ensuing theory.

2. Edward Ramsden, Hall–Effect Sensors (Newnes–Elsevier, USA, 2006).

3. If we take an electron, the Lorentz force will not be balanced across the Hall field, evH/c ≠ eE_x, because the velocity of electrons depends on the energy of the carrier v(ε). In this case it is necessary to work with the average velocity of the electrons < v(ε) >, which give equality in the Lorenz force e < v(ε) > H/c = eE_z.

4. R.S. Popovic, HallEfectDevices (Institute of Physics Publishing, Bristol and Philadelphia, 2004).         [ Links ]

5. L.S. Stilbans, Physics of Semiconductors (Nauka, Moscow, 1967).         [ Links ]

6. F.G. Bass, V.S. Bochkov and Yu. G. Gurevich, Soviet Physics–Semiconductors 7 (1973) 3–32.         [ Links ]

7. Z.S. Gribnikov, K. Hess, and G.A. Kosinovsky, J. ofAppl. Phys. 77 (1995) 1337.         [ Links ]

8. D.C. Look, Electrical Characterization of GaAsMaterials and Devices (John Wiley and Sons, New York, 1989).         [ Links ]

9. R. Landauer and J. Swanson, PhysicalReview 91 (1953) 555.         [ Links ]

10. A. Konin and R. Raguotis, J. Phys. : Condens. Matter 12 (2000) 9163.         [ Links ]

11. P.C. Banbury, H.K. Henisch and A. Many, Proc. Phys. Soc. 66A (1953) 753.         [ Links ]

12. E.I. Rashba, Soviet Physics–SolidState 6 (1965) 2597.         [ Links ]

13. G.E. Pikus, TechnicalPhysics 26 (1956) 22.         [ Links ]

14. O. Yu. Titov, J. Giraldo and Yu. G. Gurevich, Appl. Phys. Letters 80 (2002)3108.         [ Links ]

15. I.N. Volovichev, J.E. Velazquez–Perez and Yu. G. Gurevich, Solid State Electronics 52 (2008) 1703.         [ Links ]

16. Yu. G. Gurevich and F. Perez Rodríguez, Fenómenos de Transporte en Semiconductores (Fondo de Cultura Economica, Mexico, 2007).         [ Links ]

17. V.F. Gantmakher and Y.B. Levinson, Carrier Scattering in Metals and Semiconductors (North Holland, Amsterdam, 1987).         [ Links ]

18. M. Lundstrom, Fundamental Carrier Transport (Cambridge University Press, Cambridge, 2000).         [ Links ]

19. I.N. Volovichev and Yu. G. Gurevich, Semiconductors 35 (2001) 306.         [ Links ]

20. A.I. Anselm, Introduction to Semiconductor Theory (Prentice Hall, Englewood Cliffs, NJ, 1981).         [ Links ]

21. K. Seeger, Semiconductors Physics (Springer, Berlin, 1985).         [ Links ]

22. Yu. G. Gurevich, J.E. Velazques Perez, I.N. Volovichev, and O. Yu. Titov, J. Appl. Physics 101 (2007) 023705.         [ Links ]

23. P.T. Landsberg, Recombination in Semiconductors (Cambridge University, England, 1991).         [ Links ]

24. I.N. Volovichev, G.N. Logvinov, Ó. Yu. Titov and Yu. G. Gurevich, Journal of Applied Physics 95 (2004) 4494.         [ Links ]