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Revista mexicana de física
Print version ISSN 0035-001X
Rev. mex. fis. vol.52 suppl.2 México Feb. 2006
Optical sensitivity of Al/SRO/Si MOS diodes
Z. Yuª, M. Acevesª and J. Carrillob
ª Departamento Electrónica, INAOE, Apartado Postal 51, Puebla, Pue., 72000, México, email: zyu@inaoep.mx
b Centro de Investigaciones en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Puebla, México.
Recibido el 27 de octubre de 2004
Aceptado el 19 de mayo de 2005
Abstract
In this work, the IV characteristics of an Al/SRO/Si MOSlike diode under illumination were studied. A strongly illuminationdependent photocurrent was observed although the structure was opaque on both sides. The possible mechanisms that create the photocurrent were studied. We believe that the photocarriers generated in a region surrounding the surface depletion layer dominate the photocurrent. The carriers generated by light in this region can diffuse into the depletion layer, and contribute to the photocurrent.
Keywords: Siliconrich oxide; MOSlike structure; photosensitive; optical sensor.
Resumen
En este trabajo, estudiamos las características IV de una estructura Al/SRO/Si tipo MOS bajo iluminación. Se observó una gran fotocorriente aunque la estructura tiene Al que opaca por ambas superficies. Los posibles mecanismos que producen la fotocorriente fueron estudiados. Creemos que los fotoportadores generados en una región que rodea a la región de agotamiento dominan la fotocorriente. Los portadores generados en esta región difunden hacia la región de agotamiento y contribuyen a la gran fotocorriente.
Descriptores: Óxido de silicio rico en silicio; estructuras tipo MOS; fotosensibilidad; sensores ópticos.
PACS: 73.63.Kv; 73.40.Qv; 73.23.Hk; 72.20.Jv
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Acknowledgements
We thank the China National Natural Science Foundation (contract number 50172061) and CONACYT, México, for financial support. We are grateful fot the technical help from P. Alarcón, M. Landa, C. Zuñiga, I. Juarez, N. Carlos and A. Itzmoyotl.
Resumen
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