Resumo

VERA-MARQUINA, A.; MARTINEZ-CASTILLO, J.; ZALDIVAR-HUERTA, I. E.  e  DIAZ-SANCHEZ, A.. Performance Evaluation of an Integrated Optoelectronic Receiver. J. appl. res. technol [online]. 2014, vol.12, n.1, pp.45-51. ISSN 2448-6736.

This work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver is composed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8 μm BiCMOS process. The total area occupied by the photodiode is of 10,000 μm². In a first step, the generated photocurrent of the photodiode is measured for the wavelengths of 780 nm and 830 nm at different levels of optical power. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally, an electrical measurement including the transimpedance amplifier is achieved. A potential application for this optoelectronic receiver is on the first optical communications window.

Palavras-chave : Optoelectronic receiver; photodiode; optoelectronic integrated circuit; BiCMOS.

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