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Superficies y vacío
versión impresa ISSN 1665-3521
Resumen
GUARNEROS, C.; ESPINOSA, J. E.; SANCHEZ, V. M. y LOPEZ, U.. Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures. Superf. vacío [online]. 2013, vol.26, n.3, pp.107-110. ISSN 1665-3521.
We present the InxGa1-xN layers growth in a metalorganic chemical vapor deposition (MOCVD) system. First, we growth a GaN epitaxial layer on sapphire substrate, trimethylgallium (TMGa) and ammonia (NH3) are precursors of gallium and nitrogen, respectively, and hydrogen (H2) is used as the carrier gas. Later, on the GaN epilayer, the growth of the InxGa1-xN layer is carried out using trimethylindium (TMIn) as the indium precursor. The InxGa1-xN layers were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD pattern shows the diffraction lines which could be ascribed to the formation of hexagonal In0115Ga0.885N for sample A, and In0.26Ga0.74N for sample B, both with the wurtzite type structure. SEM images illustrate the effect of the growth pressure on the films surface morphology. At low pressure the sample A has smaller grain size and higher nuclei density; at high pressure the island size increases and has lower density (sample B). The alloy formation is favored at 550 Torr.
Palabras llave : InxGa1-xN alloys; Growth pressure; XRD patterns; Indium concentration; Vegard's law.