Resumo

JIMENEZ, A. et al. Analysis of threshold voltage fluctuations due to short channel and random doping effects. Superf. vacío [online]. 2013, vol.26, n.1, pp.1-3. ISSN 1665-3521.

Abstract A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET's is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions. Simulations based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. Both short channel and random dopant effects, on threshold voltage fluctuations are simulated and discussed in MOSFET's. The simulation results will be the start point for the analysis of threshold voltage fluctuations through the comparison with analytical models based on dopant number fluctuations. The simulations show that the threshold voltage fluctuations are principally determined by the fluctuation in the dopant number.

Palavras-chave : Threshold Voltage; Short Channel Effects; MOSFET; 2-D Simulations.

        · texto em Inglês     · Inglês ( pdf )