Superficies y vacío
versión impresa ISSN 1665-3521
DOMINGUEZ-J., M. A. et al. Óxido de silicio SOG como dieléctrico de compuerta recocido a 200°C. Superf. vacío [online]. 2011, vol.24, n.1, pp. 1-4. ISSN 1665-3521.
Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO2 annealed at 200°C has been done. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO2. As can be observed, these results suggest that this SiO2 annealing at 200°C could be an alternative to improve electrical characteristics of TFTs, among other device applications.
Palabras llave : SOG-SIO2; Gate dielectric; Thin film transistors; Low-temperature process.