Resumo

MENDIZABAL-RUIZ, Gerardo  e  MARTINEZ-GUERRERO, Esteban. Software de análisis de patrones de RHEED para medición in situ de velocidad de crecimiento y relajación de películas delgadas crecidas por Epitaxia de Haces Moleculares. Superf. vacío [online]. 2006, vol.19, n.2, pp.18-22. ISSN 1665-3521.

Monitoring the intensity of reflected spot in a RHEED pattern sequence is one of the most important methods used to control the growth of thin layers and sophisticated heterostructures in MBE. RHEED intensity oscillations can be used as accurate, quick and direct measure of the growth rates and fix the composition alloy as well. Measurements of lattice constant variation during the growth of heteroepitaxial system allow determine the relaxation type which is important to control the growth of high quality heterostructures. In several applications the availability of such quantitative information is useful to realize further analysis and achieve feedback between growth dynamic and external parameters, such as the cells temperatures and the shutters synchronization. In this work we present a multipurpose program, enable to analyse RHEED patterns in both modalities, real-time and off-line data analysis of thin films grown by MBE. Its main purpose is to track RHEED intensity changes and measure the rate of oscillation but it also can measure lattice constant variations. It also has image analysis capabilities such as identify low index crystal orientation, surface plotting and profile analysis, image storage and archiving data. We have applied our software to study epitaxial layers of GaAs, and InGaAs grown by MBE and the results reported below allow us gain insight into the thin film growth process proving that our developed software is a powerful tool for the characterization of such semiconductor films.

Palavras-chave : Software; RHEED; Thin films; Characterization; MBE.

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