Ingeniería, investigación y tecnología
versión impresa ISSN 1405-7743
GONZALEZ-ROLON, B y IRETA-MORENO, F. Development and Fabrication Process for ZnO Based Varistors for Medium Voltaje Arresters 13 000 V to 34 000 V. Ing. invest. y tecnol. [online]. 2011, vol.12, n.2, pp. 149-155. ISSN 1405-7743.
The fabrication process for ZnO doped varistor blocks with Sb2O3/ Bi2O3 to medium tension of 13 000 V to 34 000 V, and was optimised in terms of a starting composition and firing temperatures with amounts for Sb2O3/ Bi2O3 ratios of 1.7 by dry pressing, and fired in the temperature 1150°C ± 2°C. The microstructure characteristics were analysed across the surface of the varistor blocks in order to evaluate their microstructure homogeneity. Their current-voltage I-V and energy handling capabilities were also determined. Characteristics and electrical properties of the varistor blocks are discussed.
Palabras llave : varistor; ZnO; microstructural; additive; electrical properties; grain size.