Resumen

DING, Wenhao  y  MENG, Xianquan. Growth and UV detector of serrated GaN nanowires by chemical vapor deposition. Rev. mex. fis. [online]. 2020, vol.66, n.4, pp.490-495.  Epub 31-Ene-2022. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.66.490.

Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.

Palabras llave : Chemical vapor deposition; GaN nanowires; copper nanowires; ultraviolet detector.

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