SciELO - Scientific Electronic Library Online

vol.65 issue3Theoretical study of the electron correlation and excitation effects on energy distribution in photon impact ionizationAnalysis of the oscillatory liquid metal flow in an alternate MHD generator author indexsubject indexsearch form
Home Pagealphabetic serial listing  

Services on Demand




Related links

  • Have no similar articlesSimilars in SciELO


Revista mexicana de física

Print version ISSN 0035-001X


LINARES-GARCIA, G.  and  MEZA-MONTES, L.. Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots. Rev. mex. fis. [online]. 2019, vol.65, n.3, pp.231-238.  Epub Apr 30, 2020. ISSN 0035-001X.

A theoretical study on the effect of a magnetic field or impurities on the carrier states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots and for comparison two systems are considered; InAs embedded in GaAs and GaN in AlN. The electronic states and energy are calculated in the framework of the k p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that, depending on the type of impurity, the energy of carriers is changed and the distribution of the probability density of the carriers is affected too.

Keywords : Quantum dots; electronic states; impurities; magnetic field.

        · text in English     · English ( pdf )