Resumen

DOMINGUEZ, M.A. et al. Characterization of high mobility inverted coplanar Zinc Nitride thin-film transistors. Rev. mex. fis. [online]. 2019, vol.65, n.1, pp.10-13.  Epub 09-Nov-2019. ISSN 0035-001X.

In this work, high mobility thin-film transistors based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 thin-film transistors. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 thin-film transistors. In addition, n-type MOS capacitors were fabricated and characterized by capacitance-voltage and capacitance-frequency measurements to evaluate the dielectric characteristics of the SOG film.

Palabras llave : Room temperature; thin-film transistors; zinc nitride; 85.30.Tv; 85.30.De.

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