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Revista mexicana de física

versão impressa ISSN 0035-001X

Resumo

EDUARDO-RIVER L., J. et al. Determination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy. Rev. mex. fis. [online]. 2018, vol.64, n.6, pp.655-661.  Epub 05-Nov-2019. ISSN 0035-001X.  http://dx.doi.org/10.31349/revmexfis.64.655.

By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive P t - I r tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 - 0.64 eV. The ideality factors were in the range of 2.11 - 1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.

Palavras-chave : Schottky barrier height; conductive AFM; I-V Schottky characteristics; Pt Schottky nano-contact on ZnO thin films; electrical properties at nanoscale level; 73.61.Jc; 73.30.+y; 72.20.-I; 07.79.Lh.

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