Resumen

MENDOZA-ALVAREZ, A.; DIAGO-CISNEROS, L.; FLORES-GODOY, J.J.  y  FERNANDEZ-ANAYA, G.. Simulating effective potential under strain for holes. Rev. mex. fis. [online]. 2016, vol.62, n.5, pp.418-432. ISSN 0035-001X.

The effective potential (Veff) evolution, is graphically illustrated for an increasing mixing of heavy- and light-holes (lh) under strain. The impact of the present study is enlarged provided we were able to deduce comprehensive analytic expressions for the valence-band offset both for zinc blende and wurtzite semiconductors, useful in current solid-state physics studies, whenever one manages to manipulate the accumulated pseudomorphic strain and mixing effects in a single shoot. We found permutations of Veff character for lh, that retrieve the hypothetically predicted striking “keyboard” effect. Interestingly, the strain diminishes the keyboard profile, and also makes it emerge or vanish occasionally. Due in-plane anisotropy the keyboard effect under pseudomorphic stress turns topologically tuned. We conclude that multiband-mixing and stress-induced events, are strong competitor mechanisms that can not be universally neglected by assuming a fixed-height Veff, as a reliable none-mutable test-run input for layered systems. Our results may be of relevance for promising tunable heterostructure’s design to enhance the hole mobility in semiconductor devices.

Palabras llave : Effective scattering potential; valence-band mixing; pseudomorphic strain; valence-band offset.

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