Resumen

NAVARRO-CONTRERAS, H.; RODRIGUEZ, A.G.; VIDAL, M.A.  y  PEREZ-LADRON DE GUEVARA, H.. Raman scattering from Ge_1-xSn_x (x ≤ 0.14) alloys. Rev. mex. fis. [online]. 2015, vol.61, n.6, pp.437-443. ISSN 0035-001X.

Ge_1-xSn_x alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 % by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 % as revealed by X-ray diffraction and Raman spectroscopy.

Palabras llave : Raman; space correlation model.

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