Resumen

DOMINGUEZ-JIMENEZ, M.A. et al. Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis. Rev. mex. fis. [online]. 2015, vol.61, n.2, pp.123-126. ISSN 0035-001X.

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO₂ on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.

Palabras llave : ZnO; electrical properties; thin film transistors.

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