Resumen

OTALORA B., D.M.; OLAYA FLOREZ, J.J.  y  DUSSAN, A.. Microestructura y propiedades eléctricas de bismuto y óxido de bismuto depositados por magnetrón sputtering UBM. Rev. mex. fis. [online]. 2015, vol.61, n.2, pp.105-111. ISSN 0035-001X.

In this work, bismuth (Bi) and bismuth oxide (Bi₂O₃) thin films were prepared, at room temperature, by Sputtering Unbalanced Magnetron (UBM - Unbalance Magnetron) technique under glass substrates. Microstructural and electrical properties of the samples were studied by X-ray diffraction (XRD) and System for Measuring Physical Properties - PPMS (Physical Property Measurement System). Dark resistivity of the material was measured for a temperature range between 100 and 400 K. From the XRD measurements it was observed a polycrystalline character of the Bi associated to the presence of phases above the main peak, 2θ = 26.42° and a growth governed by a rhombohedral structure. Crystal parameters were obtained for both compounds, Bi and Bi₂O₃. From the analysis of the spectra of the conductivity as a function of temperature, it was established that the transport mechanism that governs the region of high temperature (T>300 K ) is thermally activated carriers. From conductivity measurements the activation energies were obtained of 0.0094 eV and 0.015 eV for Bi₂O₃ and Bi, respectively.

Palabras llave : Bismuth; bismuth oxide; electrical properties; structural properties.

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