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Revista mexicana de física
versão impressa ISSN 0035-001X
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VAZQUEZ-LEAL, H. et al. Perturbation method applied to a basic diode circuit. Rev. mex. fis. [online]. 2015, vol.61, n.1, pp.69-73. ISSN 0035-001X.
Because of the exponential characteristic of silicon diodes, exact solutions cannot be established when operating point and transient analysis are computed. To overcome that problem, the present work proposes a perturbation method which allows obtaining approximated analytic expressions of diode-based circuits. Simulation results show that numerical solutions obtained by using the proposed method are similar to those reported in literature, with the advantage of not requiring a user-selected arbitrary expansion point. Additionally, the method does not use the Lambert function W, reducing the proposed solution complexity, which makes it suitable for engineering applications.
Palavras-chave : Circuit analysis; nonlinear circuits perturbation method.