Resumen

OUBRAM, O.; CISNEROS-VILLALOBOS, L.; GAGGERO-SAGER, L. M.  y  ABATAL, M.. Propiedades de transporte en el transistor δ-FET. Rev. mex. fis. [online]. 2014, vol.60, n.1, pp.22-26. ISSN 0035-001X.

Electron transport in the δ-FET transistor has been studied in GaAs. A theoretical model of transport based on the electronic structure is used to calculate mobility and conductivity. Results show that the electrical properties of δ-FET depend on device intrinsic parameters (position of delta-doped quantum well, background density) and the magnitude of the voltage contact. Such results are useful in applications in temperature-insensitive devices.

Palabras llave : Transport; mobility; conductivity; transistor; δ-FET.

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