Abstract

POWER, Ch.; CALDERON, E.; GONZALEZ, J.  and  CHERVIN, J.C. Dependencia con la presión del índice de refracción del AgGaS₂. Rev. mex. fis. [online]. 2011, vol.57, n.1, pp.35-39. ISSN 0035-001X.

In this work, we study the pressure behavior of the optical absorption spectrum of a single crystal AgGaS₂, taking measurements in the infrared energy range from 0.30 up to 0.70 eV for pressures values P below 4GPa and room temperature T, using a diamond anvil cell in combination with infrared micro spectroscopy technique [1]. With this study, we determine the refraction index n variations in terms of pressure within the stability range of the chalcopyrite structure [2-6] as well as the changes under pressure of both the static (ε₀) and high frequency (ε_∞) dielectric constants. These results can be compared with the experimental values reported by Boyd et al. [7].

Keywords : I-III-VI₂ semiconductor; infrared; high pressure.

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