Revista mexicana de física
versão impressa ISSN 0035-001X
MARQUEZ-HERRERA, A. et al. Electrical properties of resistive switches based on Ba1-xSrxTiO3 thin films prepared by RF co-sputtering. Rev. mex. fis. [online]. 2010, vol.56, n.5, pp. 401-405. ISSN 0035-001X.
In this work, we propose the use of Ba1-xSrxTiO3(0 ≤ x ≤ 1) thin films for the construction of MIM (metal-insulator-metal) heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba1-xSrxTiO3 thin films was done by the rf co-sputtering technique using two magnetron sputtering cathodes with BaTiO3 and SrTiO3 targets. The chemical composition (x parameter) in the deposited Ba1-xSrxTiO3 thin films was varied through the rf power applied to the targets. The constructed MIM heterostructures were Al/Ba1-xSrxTiO3/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba1-xSrxTiO3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; SEM micrographs showed that Ba1-xSrxTiO3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the x-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO3 lattice and the obtainment of crystalline films for the entire range of the x values.
Palavras-chave : Barium strontium titanate; thin films; non-volatile memories; ReRAM cells.