Abstract

MARQUEZ-HERRERA, A. et al. Electrical properties of resistive switches based on Ba_1-xSr_xTiO3 thin films prepared by RF co-sputtering. Rev. mex. fis. [online]. 2010, vol.56, n.5, pp.401-405. ISSN 0035-001X.

In this work, we propose the use of Ba_1-xSr_xTiO₃(0 ≤ x ≤ 1) thin films for the construction of MIM (metal-insulator-metal) heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba_1-xSr_xTiO₃ thin films was done by the rf co-sputtering technique using two magnetron sputtering cathodes with BaTiO₃ and SrTiO₃ targets. The chemical composition (x parameter) in the deposited Ba_1-xSr_xTiO₃ thin films was varied through the rf power applied to the targets. The constructed MIM heterostructures were Al/Ba_1-xSr_xTiO₃/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba_1-xSr_xTiO₃ thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; SEM micrographs showed that Ba_1-xSr_xTiO₃ thin films were uniform without cracks or pinholes. Additionally, the analysis of the x-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO₃ lattice and the obtainment of crystalline films for the entire range of the x values.

Keywords : Barium strontium titanate; thin films; non-volatile memories; ReRAM cells.

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