SciELO - Scientific Electronic Library Online

 
vol.56 número3Carrier heating effects on transport phenomena in intrinsic semiconductor thin filmsBEC transition of a weakly interacting ultracold Bose gas in a linear quadrupolar trap índice de autoresíndice de materiabúsqueda de artículos
Home Pagelista alfabética de revistas  

Servicios Personalizados

Revista

Articulo

Indicadores

Links relacionados

  • No hay artículos similaresSimilares en SciELO

Compartir


Revista mexicana de física

versión impresa ISSN 0035-001X

Resumen

POWER, Ch. et al. Absorción óptica a altas presiones del TLGaSe2. Rev. mex. fis. [online]. 2010, vol.56, n.3, pp.217-222. ISSN 0035-001X.

In this paper the spectrum of optical normal transmission not polarized of TlGaSe2 is measured as a function of pressure up to 27.6 GPa at room temperature. Our results show that in the range of the visible exist the contributions of two direct gaps of energy, which present a linear dependence with the pressure. The weak transition assigned to the fundamental gap of energy, decreases up to 1.5 GPa with a linear coefficien of -5.31 × l0 -2 eVGPa-1 and the transition shows a coefficien of -9.95 × 10-2 eVGPa-1 up to 5.3 GPa (limit of pressure in the visible spectrum). The results in the infrared do not show the presence of the transition EA allowing to see only the behavior of the second transition rightly up to the pressure of metallization 24.6 GPa. In the range of pressure studied from 0.0 to 27.6 GPa, the transition EB shows a not linear behavior with the pressure of quadratic coefficien 1.83 × l0 -3 eVGPa -2.

Palabras llave : I-III-VI2 semiconductor; optical properties; infrared; high pressure.

        · resumen en Español     · texto en Español     · Español ( pdf )

 

Creative Commons License Todo el contenido de esta revista, excepto dónde está identificado, está bajo una Licencia Creative Commons