Abstract

MEJIA HERNANDEZ, J.A et al. Ion beam analysis of CH/Si layers deposited by ECR-CVD. Rev. mex. fis. [online]. 2007, vol.53, suppl.3, pp.65-67. ISSN 0035-001X.

We present in this study the characteristics of CH layers deposited on Si substrates using an electron cyclotron resonance (ECR) microwave plasma source with different H₂/CH₄ mixtures. Quantification of the hydrogen and carbon content and the thickness of the films was determined by Forward Elastic Scattering with a 8.45 MeV ¹²C³⁺ beam. The oxygen concentration in the films was measure by Nuclear Reaction Analysis (NRA) using a 1.040 MeV deuterium.

Keywords : Plasma enhanced chemical vapor deposition; thin films; IBA methods.

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