Resumo

DAVALOS-SANTANA, M.A.; SANDOVAL-IBARRA, F  e  MONTOYA-SUAREZ, E. A 540µT^-1 silicon-based MAGFET. Rev. mex. fis. [online]. 2007, vol.53, n.3, pp.218-221. ISSN 0035-001X.

This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5 µm CMOS process, presents a relative magnetic sensitivity S_r=540/µT ^-1 at room temperature.

Palavras-chave : Semiconductor devices; field effect devices; microelectronics.

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