SciELO - Scientific Electronic Library Online

 
vol.52 suppl.3Absorción óptica y dependencia de la brecha de energía con la temperatura en monocristales del sistema Cd1-xMn xIn2S4Estudio del efecto del Mg sobre la cinética isotérmica y no isotérmica de una aleación AA3003 por diferentes técnicas de medidas author indexsubject indexsearch form
Home Pagealphabetic serial listing  

Services on Demand

Journal

Article

Indicators

Related links

  • Have no similar articlesSimilars in SciELO

Share


Revista mexicana de física

Print version ISSN 0035-001X

Abstract

PEREZ G, F. V; POWER, Ch; CHERVIN, J.C  and  GONZALEZ, J. Dependencia con la temperatura de los fonones activos en Raman del compuesto TlGaS2. Rev. mex. fis. [online]. 2006, vol.52, suppl.3, pp.167-169. ISSN 0035-001X.

The isobaric temperature dependence of the Raman active phonons of layer TlGaS2 compound was studied in the temperature range from 26 K to 300 K, approximately. The results showed that for the internal modes of material the anharmonic contributions to the phonon decay is higher than the corresponding contribution of the external modes. Moreover, the temperature variation of the external mode frequencies temperature variation is more affected for the volume changes of the material than for the anharmonic participation.

Keywords : Semiconductors; TlGaS2; temperature.

        · abstract in Spanish     · text in Spanish     · Spanish ( pdf )

 

Creative Commons License All the contents of this journal, except where otherwise noted, is licensed under a Creative Commons Attribution License