Resumo

LOPEZ-LOZANO, X.; NOGUEZ, C.  e  MEZA-MONTES, L.. Electronic and optical properties of InAs(110). Rev. mex. fis. [online]. 2005, vol.51, n.2, pp.168-175. ISSN 0035-001X.

The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface.

Palavras-chave : Surface reconstruction; surface states; reflectance anisotropy; differential reflectance; semiconductor surface; indium arsenide; III-V surface.

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