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Revista mexicana de física

versión impresa ISSN 0035-001X


OLGUIN, D.  y  BAQUERO, R.. Electronic band structure of (001)-semiconductor surfaces: the frontier-induced semi-infinite-medium states. Rev. mex. fis. [online]. 2003, vol.49, n.1, pp.1-5. ISSN 0035-001X.

In previous work we have discussed the valence band electronic structure of the (001) oriented semi-infinite medium of the II-VI wide band gap zinc-blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and spin-orbit bands). Two of these resonances correspond to the anion-terminated surface and the third one to the cation terminated surface. Furthermore, we have shown that three non dispersive (001)-surface-induced bulk states, in the Γ- Κ direction of the 2D Brillouin zone, are also characteristic of these systems. To identify these states, from other known surface states, we have called them frontier-induced semi-infinite-medium states. In order to continue with the description of these systems, we review the main characteristics of the electronic structure of the (001)-surfaces and we present a detailed theoretical discussion of the frontier-induced semi-infinite-medium states. We use tight binding Hamiltonians and the well-known Surface Green's Function Matching method to calculate the electronic surface band structure.

Palabras llave : Electronic states; surface resonances; tight-binding method.

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