Resumo

MALKI, R. et al. Investigation of the substituting effect of Se on the physical properties and performances of CdSe_xTe_1−x and ZnSe_x Te_1−x materials for semiconductor radiation detectors. Rev. mex. fis. [online]. 2021, vol.67, n.4, e041002.  Epub 14-Mar-2022. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.67.041002.

In this work, structural and electronic properties of CdSe x Te 1−x and ZnSe x Te 1−x semiconductor detectors at various concentrations x = 0,0.25,0.5,0.75 and 1 of Selenium (Se) have been determined using the full potential-linearized augmented plane wave (FP-LAPW) based on the density functional theory (DFT). The lattice parameters results show good agreement when compared with reports. Band structure calculations indicate direct gap transitions and also yield the energy gap values, with good agreement with reports. Geant4 simulations have yielded the absolute and full-energy peak detection efficiencies and energy resolution at 1.500 ×1.500 of these alloys as semiconductor detectors in the 511-1332 keV gamma-ray energy range. Results are in a good agreement with the available theoretical and experimental data.

Palavras-chave : CdSe_x Te_1−x; ZnSe_x Te_1−x; FP-LAPW; DFT; Geant4; Full-energy peak efficiency; absolute efficiency.

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