Resumo

URBANO ALTAMIRANO, F.; TITOV, O. Yu.  e  GUREVICH, Yu. G.. Estructura metal-semiconductor-metal en equilibrio. Rev. mex. fis. [online]. 2020, vol.66, n.5, pp.559-567.  Epub 31-Jan-2022. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.66.559.

This article analyzes the behavior of electric charge carriers (electrons and holes) in a semiconductor material with metal contacts under the thermodynamic equilibrium condition. Expressions were obtained for the concentrations of the electrons and holes, as well as for the Debye Radius (r D ) both in the general bipolar case, and in the particular cases of n,p and intrinsic type materials. Based on the previous expressions, the case is analyzed when the quasi-neutrality phenomenon appears in a semiconductor material.

Palavras-chave : Charge doolie; metal-semiconductor contact; quasi neutrality.

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