Resumo

CERON, S.; HERNANDEZ, J.  e  DOMINGUEZ, M.A.. Caracterización de capacitores MOS basados en peliculas de oxido de hafnio obtenidas a 150°C. Rev. mex. fis. [online]. 2016, vol.62, n.6, pp.600-603. ISSN 0035-001X.

The fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150 ∘ C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequency and current vs. voltage. The results demonstrate the feasibility of Hafnium Oxide film as a dielectric in electronic devices.

Palavras-chave : Hafnium oxide; MOS capacitor; electrical characterization.

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