Resumo

LEAL-ROMERO, R. et al. Proceso de grabado seco de silicio monocristalino para aplicaciones en guías de onda coplanares. Rev. mex. fis. [online]. 2010, vol.56, n.1, pp.92-96. ISSN 0035-001X.

In this work, the anisotropic etching and the use of silicon rich oxide (SRO) are studied in order to improve the waveguide coplanar (CPW). Experimental results of dry etching of mono-crystalline silicon for application in CPW's using RIE/ICP reactor are presented. The contribution of the physical as much chemical components of dry etching is observed. The reactive gases that are used are Sulfur hexafluoride (SF₆) mixed with oxygen (O₂). For etching the silicon masks of photo-resist and silicon oxide (SiO2) are used, this last one is obtained by atmospheric pressure chemical vapor deposition (APCVD). Speed of etching from 2.8 to 3.4 µm/min are obtained when using SiO₂ as mask.

Palavras-chave : Mono-crystalline silicon; coplanar waveguide (CPW); dry etching; SRO.

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