Resumo

HYUN-WOONG, Chang et al. Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process. Rev. mex. fis. [online]. 2007, vol.53, suppl.1, pp.1-4. ISSN 0035-001X.

Polycrystalline silicon thin film transistors (poly-Si TFTs) for LCD application were fabricated on glass substrate using the field-aided lateral crystallization (FALC) process. The crystallization of amorphous silicon (a-Si) was significantly enhanced when the electric field of 100V/cm was applied to selectively Ni-deposited a-Si film during thermal annealing at 500° in N2 ambient for 5 hrs. The channel of the transistors was directionally crystallized from the negatively biased electrode side. The field-effect mobility of the fabricated poly-Si TFTs was about 200.5 cm²/V-s. Therefore, the possibility of high-performance and low-temperature (<500°) poly-Si TFTs was demonstrated by using the Ni-FALC process.

Palavras-chave : Field aided lateral crystallization; Ni catalyst; polycrystalline silicon thin film transistors; low temperature crystallization.

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