Resumo

GONZALEZ-ALCUDIA, M.; ZAPATA-TORRES, M.; MELENDEZ-LIRA, M.  e  PENA, J.L.. Crecimiento de películas de CdTe:Al. Rev. mex. fis. [online]. 2006, vol.52, n.1, pp.48-52. ISSN 0035-001X.

CdTe:Al films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperatura was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreasesand the band gap increases with Al concentration.

Palavras-chave : CdTe:Al films; crystal structure.

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