Resumo

REYES-BETANZO, C.; MOSHKALYOV, S. A.  e  SWART, J.W.. Grabado anisotrópico de silicio para aplicación en micromaquinado usando plasmas de SF₆/CH₄/O₂/Ar y SF₆/CF₄/O₂/Ar. Rev. mex. fis. [online]. 2004, vol.50, n.2, pp.203-207. ISSN 0035-001X.

We investigated the reactive ion etching of silicon using SF₆/CH₄(CF₄)/O₂/Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometer, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 μm/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology.

Palavras-chave : MEMS; silicon; deep etching; plasma; anisotropy.

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