Resumo

PEYKOV, P.; CARRILLO, J.  e  ACEVES, M.. Influence of surface generation velocity and field-enhanced carrier generation on the measured generation lifetime and relaxation time constant in MOS structures. Rev. mex. fis. [online]. 2003, vol.49, n.2, pp.150-154. ISSN 0035-001X.

Today's high quality semiconductor materials are characterized with generation lifetimes in the range 10^-3- 10^-2 sec. This requires re-examination of the influence of some factors on the correct extraction of generation lifetime with the measurement techniques used. Surface generation velocity and field-enhanced carrier generation influence on the measured generation lifetime and relaxation time constant in MOS structures. In the present work, analysis of this influence is presented. It is shown how a simple interpretation of the experimental data can introduce a large error in the determination of these parameters. The influence of all factors must be taken into account.

Palavras-chave : Field-enhanced carrier generation; surface generation velocity; MOS structures.

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