Resumo

ROMERO PAREDES R., G.; PENA-SIERRA, R.  e  CASTILLO-CABRERA, G.. Fabricación y caracterización de diodos electro-luminiscentes de silicio poroso. Rev. mex. fis. [online]. 2002, vol.48, n.2, pp.92-99. ISSN 0035-001X.

Electroluminescent diodes with emission in the visible region of the electromagnetic spectrum were developed using thin porous silicon layers (PSL). The device structure consists of a metal-porous silicon junction formed with gold and PSL with porosity of 50%. The photoluminescence (PL) spectra of the PSL and the resulting electroluminescence (EL) spectra of the devices were studied. The maximum of the PL - and EL spectra is located at 800 nm and 560 nm, respectively. The origin of the electro luminescent signal is ascribed to the silicon oxide covering the silicon filaments of the PSL.

Palavras-chave : Porous silicon layers; electroluminescent diodes; photoluminescence.

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