Resumo

SAAVEDRA-GOMEZ, H. J. et al. Enhanced RF Characteristics of a 0.5 pm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology. J. appl. res. technol [online]. 2014, vol.12, n.3, pp.471-476. ISSN 2448-6736.

In this work a technique to heighten the breakdown voltage and the transition frequency (f_T) in standard MOS technology is presented. By using an optimized extended drift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the operation frequency, the standard analog/digital pads were modified to decrease coupling effects with the substrate. These two enhancements make the proposed MOSFET structure suitable for mid-power RF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdown voltage of 20 V, IP3 of +30.2 dBm and an improvement of 31.9% and 34.7% of the extrinsic f_T and f_max, respectively.

Palavras-chave : MOSFET; HVMOS; High Breakdown.

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