Resumo

OBREGON, O.; LUNA-LOPEZ, J. A.; ROSALES, P.  e  DOMINGUEZ, M. A.. Transistores de película delgada basados en óxido de Zinc por spray pyrolysis ultrasónico de alta frecuencia a baja temperatura. Rev. mex. fis. [online]. 2021, vol.67, n.4, e041004.  Epub 14-Mar-2022. ISSN 0035-001X.  https://doi.org/10.31349/revmexfis.67.041003.

In this work, the fabrication of zinc oxide thin film transistors (ZnO TFTs) on plastic substrates by High-frequency Ultrasonic Spray Pyrolysis at Low Temperature is presented. The maximum fabrication temperature was 200◦C. Spin-on glass was used as gate insulator. Polyethylene terephthalate is used as plastic substrate. The ZnO TFTs exhibit an electron mobility of 1.25 cm2/Vs and a threshold voltage of 10.5 V, while the on/off current ratio was of 104. In addition, the trap density in active layer and at the insulator/semiconductor interface is extracted.

Moreover, Metal-Insulator-Metal capacitors were fabricated on plastic and characterized in order to evaluate the gate insulator.

Palavras-chave : Thin-film transistors; Zinc oxide; ultrasonic spray pyrolysis; spin-on glass; flexible electronics.

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