Investigación

 

Refractive index expressions for Ga_1-xln_xAs, GaAs_1-xN_x and Ga_1-xln_xN_yAs_1-y alloys

 

J.A. Martínª and M. Sánchez^b

 

ª Facultad de Ciencias Técnicas, Universidad de Ciego de Ávila, Carretera a Morón Km 9(1/2), Ciego de Ávila, Cuba. e-mail: jamartin@unica.cu

^bFacultad de Física, Universidad de La Habana, San Lázaro y L., Vedado, 10400, La Habana, Cuba.

 

Received 8 December 2014.
Accepted 21 April 2015.

 

Abstract

An expression suitable to estimate the refractive index of Ga_1-xln_xAs, GaAs_1-xN_x and Ga_1-xln_xN_yAs_1-y with 0 ≤ x ≤ 0.4 and 0 ≤ y ≤ 0.04 for band gap energies from 0.8 to 1.1 eV is presented. In case of Ga_1-xln_xAs, an improved expression, which shows better agreement with experimental data than previously reported expression, is proposed.

Keywords: GalnNAs; GaAsN; diluted nitrides semiconductors; refractive index; optical properties.

PACS: 78.20.Ae; 78.20.Bh; 78.20.Ci

 

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