Resumen

PEYKOV, P.; DIAZ, T.  y  ACEVES, M.. Analyse of the lateral surface generation in MOS structures. Rev. mex. fis. [online]. 2004, vol.50, n.1, pp.1-5. ISSN 0035-001X.

In the measurements of the generation lifetime, using the method of Zerbst, an effective generation lifetime is measured. According to the model used, this parameter includes the real generation lifetime, surface generation velocity at the depleted lateral space charge region and the diameter of the gate. In this paper is shown that not all but part of the lateral space charge region is fully depleted during the time of measurement. A correction of the model, taking into account the contribution of surface generation velocity only on the depleted lateral space charge region to the generation process, is proposed. The influence of this correction on the generation lifetime obtained by the method of Zerbst is shown.

Palabras llave : MOS structures; generation lifetime; surface generation velocity.

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