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 González-Morales, M.A. et al. Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates. Superf. vacío, 2022, vol.35. ISSN 1665-3521
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 Díaz-Reyes, J. et al. Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy. Rev. mex. fis., Feb 2017, vol.63, no.1, p.55-64. ISSN 0035-001X


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